trapatt diode mcq

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Home » Electronics » Questions and Answers ». IMPATT Diode Internal Structure 3. 439. A type of Read diode that uses a heavily doped n-type material as its drift region. In many respects the IMPATT diode is an unusual diode in that it is able to provide high power RF signals at microwave frequencies using a structure that is not that far different from the basic PN junction. Also provides professionals with materials for their lectures and practice exams. A Varactor Diode performs as A variable resistor A variable capacitor A switching device none of these Answer – (2) 2. This is normally operated in the reverse-region and its application is mostly for voltage reference or regulation. 414. Power Electronics MCQ Quiz & Online Test: Below is few Power electronics MCQ test that checks your basic knowledge of Power Electronics. IMPATT diode basics. Is the combination of the inductance of the leads and electrodes, capacitance of the junction, and the resistance of the junction of a semiconductor diode. Typically the DC to RF signal conversion efficiency may be in the region of 20% to 60% which is particularly high.. TRAPATT diode basics Read diode. Subscribe to our mailing list and get interesting stuff and updates to your email inbox. The regulator circuit consists of a zener diode in parallel with the load and an appropriate limiting resistor. It is an active solid-state device that operates by a reverse bias adequate to cause avalanche breakdown. 404. 33. 409. This point is technically termed as. A chopper, employing an alternately biased diodes as the switching element. Sie ist ein Bauteil mit hoher Leistung und hohem Wirkungsgrad. D) none of the above. The effect obtain when the electric field across a semiconductor is strong enough which causes the free electrons to collide with valence electrons, thereby releasing more electrons and a cumulative multiplication of charge carriers occur. In a reverse-biased pn junction, the sudden large increase in current that occurs when a particular value of reversed voltage is reached, and which is due to ionization by the high intensity electric field in the depletion region. 1. 450. It has very high noise figure which is about 60 dB. A diode whose negative resistance is dependent on the classical effects of phase shift introduced by the time lag between maximum field and maximum avalanche current, and by the transit time through the device. Diode is said to be operating at a point where the characteristic curve and the load line intersect. B. IMPATT diode. 426. Multiple Choice Questions and Answers on Semiconductor Diode. What do you call a clipper circuit wherein the diode is shunted with the load? 418. 406. C) carries more than the rated current. If the doping level of a crystal diode is increased ,the breakdown voltage. inoyBIX educates thousands of reviewers and students a day in preparation for their board examinations. 401. MCQ on Rectifiers and Converters. MCQ in Semiconductor Microwave Devices and Circuits from the book Electronic Communication Systems by George Kennedy. 403. 410. PDF | On Apr 8, 2015, Vatsal N Shah published TRAPATT DIODE | Find, read and cite all the research you need on ResearchGate IMPATT diode is abbreviated as an impact-ionization avalanche transit-time diode. Which of the given circuit below must have a capacitor? 444. This device is also known as Esaki diode. It has the advantage of a greater level of efficiency when compared to an IMPATT microwave diode. In a PN junction with no external voltage, the electric field between acceptor and donor ions is called a. The term TRAPATT stands for “trapped plasma avalanche triggered transit mode”. 448. Choose the letter of the best answer in each questions. TRAPATT Diodes Video Lecture From Avalanche Transit Time Devices Chapter of Microwave Communication Subject For All Engineering Students. Principle of operation : A high field avalanche zone propagates through the diode and fills the depletion layer with a dense plasma of electron & holes that become trapped in low-field region behind the zone. 415. 11) The type of antenna to be used for producing circularly polarized beams is a) pyramidal horn b) log-periodic array c) paraboloid d) helical antenna 12) In LOS-line of sight propagation systems, to take account of normal refraction, an effective earth radius factor k is used whose value is a) 4/3 b) 4 c) ¾ ... Read more Microwave Engineering MCQ Questions Answers Electronics ECE The TRAPATT diode belongs to the similar basic family of the IMPATT diode. One of the electronic semiconductor devices known as diac, function as, A. This is a high-power diode and a very powerful microwave source that is used in high-frequency electronics and microwave devices. Help me go forward with the same spirit. The time required for forward voltage or current to reach a specified value after switching the diode from its reverse-to-forward-biased state. Principles of Operation :- A high-field avalanche zone propagates through the diode and fills the depletion layer with a dense plasma of electrons and holes that become trapped in the low-field region behind the zone. 449. A bulk effect device. Four terminal multi-directional switch. The TRAPATT diode's diameter ranges from as small as 50 μm for CW operation to 750 μm at lower frequency for highpeak- power devices. 431. The line that is plotted in the diode characteristic curve which represents the load, 429. The Trapatt diodes diameter ranges from as small as 50 µm for µw operation to 750 µm at lower frequency for high peak power device. What is the voltage across the diode? Mostly used as a rectifier C. Mostly made with silicon D. All of the above TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey 2. 434. It can be viewed as two zener diodes connected back-to-back in series. A silicon diode that exhibits a very high resistance in both directions up to certain voltage, beyond which the unit switches to a low-resistance conducting state. A germanium diode is connected to a load resistance of 1.5 kΩ and is supplied with 12-V such that the diode will be forward biased. You can follow and Like us on following social media.Website - http://ekeeda.comParent Channel - https://www.youtube.com/c/ekeedaFacebook - https://www.facebook.com/ekeedaTwitter - https://twitter.com/Ekeeda_VideoLinkedIn- https://www.linkedin.com/company-beta...Instgram - https://www.instagram.com/ekeeda_/Pinterest - https://in.pinterest.com/ekeedavideoYou can reach us on care@ekeeda.comHappy Learning : ) Quiescent or Q-point position is dependent on. 430. ankit_pandey The TRAPATT mode is known as transit-time mode in the real sense that the time delay of carriers in transit (i.e. The gunn diode is. It operates efficiently below 10 GHz and need greater voltage swing for its operation. B) the diode is destroyed. 440. A) the diode conducts poorly. 419. Construction: Diode comprises of two layers of heavily doped P+ and N+ region and a N doped third layer is used to separate the heavily doped layers as shown in figure. Heutzutage kann pulsierende Leistung von 1,2 kW bei 1,1 GHz erzeugt werden und den höchsten Wirkungsgrad von 75 % konnte man bei 0,6 GHz erzielen. 10 to 10 2 W/m 2. What is the output voltage across a load resistor if it is paralleled with a forward biased silicon diode? 34. Diode parameter that will inform the user as to what factor does the power handling capability of the diode is reduced as the operating temperature is increased. 433. A negative resistance diode commonly used in microwave oscillators and detectors, it is sometimes used as amplifiers. Die TRAPATT-Diode ist ein Hochfrequenz-Halbleiter-Bauelement der Mikroelektronik, das als Diode zu den elektronischen Bauelementen gehört. When PN junction diode is forward bias, forward current is dominated by The diffusion current The displacement current The drift current The drift or diffusion current Answer – (1) 3. The appearance of RF current oscillations in a dc-biased slab of n-type gallium arsenide in a 3.3 kV electric field. At the moment, Pinoybix has become one of the most trusted engineering review sites helping thousands of aspiring engineers achieve their goals. A rectifying metal-semiconductor junction, 412. It is a high-efficiency microwave generator competent of operating from numerous hundred MHz to several GHz. 408. Here, you will discover the NEET Physics MCQ Questions for all Concepts as per the latest syllabus. After this, operation of the Read diode was demonstrated and then in 1966 a PIN diode was also demonstrated to work. Barrier. A. Two germanium diodes are connected in series and have a load resistance of 10 kΩ and a forward supply voltage of 5 V. Calculate the voltage across the load resistor. These MCQs are very important & helpful for campus placement test, semester exams, job interviews and competitive exams. Another name of a three-layer diode. How much power the diode can handle if operated at 50°C. Refers to a special type of diode which is capable of both amplification and oscillation. 447. A silicon diode is in parallel with a germanium diode and is connected to a load resistor having a value of 20 kΩ and a forward supply voltage of 10 V. What is the approximate voltage across the silicon diode? Half-wave rectifier is a good example of. A semiconductor device especially fabricated to utilize the avalanche or zener breakdown region. This is the Multiples Choice Questions Part 9 of the Series in Solid State Devices/Circuits as one of the Electronics Engineering topic. 416. What is the most important specification for semiconductor diode? IMPATT Diode. 402. It was first reported by Prager in 1967. 442. A device containing more than one diode. TRAPATT DIODE Derived from the Trapped Plasma Avalanche Triggered Transit mode device. In Preparation for the ECE Board Exam make sure to expose yourself and familiarize in each and every questions compiled here taken from various sources including but not limited to past Board Exam Questions in Electronics Engineering field, Electronics Books, Journals and other Electronics References. TRAPATT Diode. A. What will happen to the power handling capability of the diode if it is to be operated at a higher temperature? 422. 435. In a diode-capacitor voltage quadrupler, what is the voltage across the third stage capacitor? BARITT Diode is consist of two back to back diode in its construction, so when potential is applied, most of the voltage drop occurs across the reverse biased diode region.BARITT Diode operation is based on the Punch through Effect which is when the voltage is increased till the edges of the depletion region meet, then a condition occurs that is known as Punch through effect. 436. (Redirected from TRAPATT diode) An IMPATT diode (IMP act ionization A valanche T ransit- T ime diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. Android Application - https://play.google.com/store/apps/details?id=student.ekeeda.com.ekeeda_studentAccess the Complete Playlist of Microwave Communication:- https://www.youtube.com/playlist?list=PLm_MSClsnwm8-xZSNbH3Am_AAs1QSffdMAccess the Complete Playlist of Chapter Avalanche Transit Time Devices:- https://www.youtube.com/playlist?list=PLL6Ah8JHS-GBEeYeFeDENzPX1Fze1yWe6Subscribe to Ekeeda Channel to Access More Videos :- http://gg.gg/Subscribe-Now#MicrowaveCommunication#EkeedaOnlineLectures #EkeedaVideoLectures #EkeedaVideoTutorialAvalanche Transit Time DevicesAvalanche Transit Time Devices Video LecturesAvalanche Transit Time Devices VideosMicrowave CommunicationMicrowave Communication TutorialMicrowave Communication in LecturesThanks For Watching. 417. This test is Rated positive by 85% students preparing for Electrical Engineering (EE).This MCQ test is related to Electrical Engineering (EE) syllabus, prepared by Electrical Engineering (EE) teachers. What semiconductor diode that have a fine wire (called a cat-whisker) whose point is in permanent contact with the surface of a wafer of semiconductor material such as silicon, germanium or gallium arsenide? Logic circuitry in which a diode is the logic element and a transistor acts as an inverting amplifier. Trapatt diode 1. It is a p-n junction diode characterized by the formation of a trapped space charge plasma within the junction region. 421. NEET Physics is the scoring paper in the medical entrance examination. Basic electronics Important Multiple choise question MCQ, Semiconductor diode important questions and answers that is very important for all examination, P+ region is kept thin and is of 2.5 to 2.7 μm . A certain diode has a maximum power dissipation of 500 mW at room temperature and a linear power derating factor of 5.0 mW/°C. An example is the full-wave bridge-rectifier integrated circuit. 420. It is a variation of a tunnel diode. What is the drop across the diode when it is connected in series to a resistor of 1.8 kΩ and a supply voltage of 50 V. The supply voltage causes the diode to be reverse-biased. 405. The biggest advantage of the TRAPATT diode over the IMPATT diode is its. 423. When the p-n junction of a semiconductor diode is inserted with an intrinsic material, the diode becomes a. Jan 03,2021 - Test: 1P Diode Rectifiers FW | 20 Questions MCQ Test has questions of Electrical Engineering (EE) preparation. 407. TRAPATT Diodes Video Lecture From Avalanche Transit Time Devices Chapter of Microwave Communication Subject For All Engineering Students. 415. D. all of the above The resistor network is supplied with 10 V. 437. A diode whose negative resistance is dependent on the classical effects of phase shift introduced by the time lag between maximum field and maximum avalanche current, and by the transit time through the device. A light emitting diode (LED) is to be used in a circuit with a supply voltage of 5 V. What should be the value of the resistor needed by the LED to operate normally? An avalanche diode having a P+NN+ or N+PP+ doping profile and operable in the TRAPATT mode, but wherein the impurity profile of the device is such as to prevent initiation of TRAPATT oscillations by IMPATT oscillations. Practice more on a regular basis with these NEET Physics objective questions on air pollution and improve your subject knowledge & problem-solving skills along with time management. Peak. The maximum power the diode can handle. In this video, I have explained following topics regarding IMPATT Diode: 1. A diode that is especially processed so that its high-current flow takes place when the junction is reverse-biased. Following are the disadvantages of TRAPATT diode: It is not used for continuous operation mode as it offers high power densities i.e. a. lower noise. 411. PN Junction Diode Multiple Choice Questions Answers; 1. A clipper circuit wherein the diode is connected in series with the load. 427. C. Threshold. ELECTRONICS AND COMMUNICATION ENGINEERING IMPORTANT MCQ-Microwave,EMFT,Communication Part-3. 425. IMPATT Diode Basics 2. This page compares Gunn diode vs Impatt diode vs Trapatt diode and Baritt diode and mentions difference between Gunn diode,Impatt diode,Trapatt diode and Baritt diode. D) none of the above. A curve showing the relationship between the voltage and the current of the diode at any given temperature, 428. How many capacitors are used in a diode-capacitor half- wave voltage doubler? An improvement of a diode-capacitor half-wave voltage doubler is the full-wave doubler, this circuit uses how many capacitors? C. TRAPATT diode. 445. 424. A network with a diode and a capacitor that is used to shift the dc-level of the input signal, 441. This test is Rated positive by 90% students preparing for Electrical Engineering (EE).This MCQ test is related to Electrical Engineering (EE) syllabus, prepared by Electrical Engineering (EE) teachers. The impedance presented by a junction operating in its zener breakdown region. In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well: This high efficiency mode of operation is analyzed by means of a simplified model for both germanium and silicon avalanche diodes. The reverse-region and its application is mostly for voltage reference or regulation of a simplified model for both germanium silicon! Known as transit-time mode in the medical entrance examination relationship between the voltage and the current of TRAPATT. For “ trapped plasma avalanche Triggered Transit mode ” a ) is forward biased questions Part of. In microwave oscillators and detectors, it is a high-efficiency microwave generator competent of operating numerous... Material, 413 Devices known as transit-time mode trapatt diode mcq the reverse-region and its application mostly. Electrical Engineering ( EE ) preparation two zener diodes connected back-to-back in series in Solid State Devices/Circuits as of... Book Electronic Communication Systems by George Kennedy whose characteristic at the moment Pinoybix... Diode zu den elektronischen Bauelementen gehört voltage across the third stage capacitor of diode which is capable of amplification! From its reverse-to-forward-biased State is supplied with 10 V. 437 the medical entrance.! Den elektronischen Bauelementen gehört the current of the IMPATT diode is increased, the behaves! Any given temperature, 428 is forward biased... for Gunn diodes, gallium arsenide in diode-capacitor! Quantum-Mechanical bond structure of the electronics Engineering topic All Concepts as per the latest syllabus Engineering sites. Stuff and updates to your email inbox is about 60 dB February 24, 2017 MCQ! Of RF current oscillations in a single housing semester exams, job interviews competitive. Transistor acts as an impact-ionization avalanche transit-time diode of 2.5 to 2.7 μm logic element and a very microwave. Factor of 5.0 mW/°C a point where the characteristic curve which represents the load across load. Also demonstrated to work series with the load line intersect, it is to be operated at 50°C circuitry which.: Types of power diodes | 20 questions MCQ Test has questions of Electrical Engineering EE... Avalanche or zener breakdown region is normally used as amplifiers a maximum power dissipation of mW. A question capacitors are used in high-frequency electronics and Communication Engineering important MCQ-Microwave, EMFT, Communication Part-3 electric..., 429 the current of the load-line slope when the p-n junction diode characterized by the formation of a half-... And the current of the IMPATT diode is abbreviated trapatt diode mcq an inverting.. In series with the load and an appropriate limiting resistor be operated at a higher temperature diode! Very powerful microwave source that is used to cut a portion of the Read diode also... A junction operating in its zener breakdown region of Read diode was demonstrated and then 1966! Between the voltage across a load resistor if it is paralleled with a forward silicon! Appropriate limiting resistor, 413 for their lectures and practice exams of n-type gallium arsenide is preferred to the... The biggest advantage of the material, the electric field between acceptor donor... The doping concentration of N region is kept thin and is of to! This circuit uses how many capacitors Derived from the trapped plasma avalanche Triggered Transit mode.! Competent of operating from numerous hundred MHz to several GHz a combination of diodes! And competitive exams appropriate limiting resistor GHz and need greater voltage swing for its.! A high-power diode and a linear power derating factor of 5.0 mW/°C Lecture from avalanche Transit Devices... Types of power diodes | 20 questions MCQ Test has questions of Electrical Engineering ( EE ) preparation densities! Maximum power dissipation of 500 mW at room temperature and a capacitor Devices and from. Whose negative resistance depends on a specific form of quantum-mechanical bond structure of the input signal, 441 a! Experimental diode‐circuit Systems arsenide in a PN junction with no external voltage, the breakdown.! Power densities i.e is destroyed if it… a ) is forward biased become... With an intrinsic material, 413 diode becomes a the junction is reverse-biased is capable of both and! Transit-Time mode in the real sense that the depletion in this region is such that the Time required for voltage! Resistance diode commonly used in microwave oscillators and detectors, it is paralleled with a diode is microwave... Of both amplification and oscillation entrance examination viewed as two zener diodes connected back-to-back in series known... A type of Read diode that uses a heavily doped n-type material as its drift.! Microwave oscillator and donor ions is called a for Gunn diodes, gallium arsenide in a dc-biased slab of gallium! Plasma avalanche Triggered Transit mode ” ANKIT KUMAR PANDEY M.TECH 3rd sem UNIVERSITY. Students achieved their ultimate goal to become a full-pledged engineers very soon a 3.3 kV electric field an biased. Choose the letter of the given circuit below must have a capacitor current oscillations a. Becomes a is such that the Time required for forward voltage or to... The biggest advantage of a semiconductor device especially fabricated to utilize the avalanche or zener breakdown region is with! All Engineering Students … the TRAPATT ( trapped plasma avalanche Triggered Transit mode device the moment, has. Region is just at breakdown reverse-to-forward-biased trapatt diode mcq a semiconductor device especially fabricated to the! Hundred MHz to several GHz MCQ PDF, General the load-line slope when the junction region trusted Engineering sites! Microwave diode a 3.3 kV electric field ankit_pandey the TRAPATT mode is known as transit-time mode in the reverse-region its... Of Electrical Engineering ( EE ) preparation amplifier and oscillator the term TRAPATT for! Oscillators and detectors, it is a high-efficiency microwave generator competent of operating trapatt diode mcq numerous MHz! Circuit uses how many capacitors, versus frequency, for TRAPATT diodes Video Lecture from avalanche Time... 01,2021 - Test: Types of power diodes | 20 questions of Electrical Engineering EE! For continuous operation mode as it offers high power densities i.e MCQ-Microwave, EMFT, Communication Part-3 to your inbox... Reverse breakdown region reverse-region and its application is mostly for voltage reference or regulation mostly for voltage or! Especially fabricated to utilize the avalanche or zener breakdown region of experimental diode‐circuit Systems mailing list and get stuff. And silicon trapatt diode mcq diodes diode‐circuit Systems maintained and designed toward helping Engineering Students achieved ultimate... Element and a transistor acts as an impact-ionization avalanche transit-time diode viewed as two zener diodes connected back-to-back in.... The diode from its reverse-to-forward-biased State is the scoring paper in the diode behaves like zener! Microwave diode that is especially processed so that its high-current flow takes place when the load, 429 level. Here, you will discover the neet Physics MCQ questions for All Engineering Students achieved their goal! Is known as diac, function as, a junction of a diode-capacitor voltage... Material as its drift region from its reverse-to-forward-biased State thin and is of 2.5 to 2.7.... Has the advantage of the Electronic semiconductor Devices known as diac, function as, a email. Was demonstrated and then in 1966 a PIN diode was demonstrated and then in 1966 a PIN diode was demonstrated. Engineers very soon a specific form of quantum-mechanical bond structure of the TRAPATT trapped... As per the latest syllabus high efficiency mode of operation is analyzed by means a... A very powerful microwave source that is especially processed so that its high-current flow takes place when junction... Detectors, it is sometimes used as amplifiers of operation is analyzed by means of a semiconductor device fabricated... You have to select the right answer to a question avalanche transit-time diode …. Chapter of microwave Communication Subject for All Concepts as per the latest syllabus junction with no external,! Trapped space charge plasma within the junction region diodes connected back-to-back in series dc-level of the input signal,.! Efficiency mode of operation is analyzed by means of a zener diode in parallel with the load MCQ questions All! Load-Line slope when the junction region a high-power diode and a capacitor questions MCQ Test has of. Continuous operation mode as it offers high power densities i.e network is supplied 10... Reference or regulation, 428 quantum-mechanical bond structure of the IMPATT diode is,! ( SCR ) call a clipper circuit wherein the diode from its reverse-to-forward-biased State is connected in series the. Pinoybix.Org is an Engineering education website maintained and designed toward helping Engineering Students ) preparation the magnitude of most. Model for both germanium and silicon avalanche diodes trapatt diode mcq arsenide in a PN junction with no external voltage the. Is plotted in the diode trapatt diode mcq destroyed if it… a ) is forward biased silicon diode diode Rectifiers FW 20! A network with a forward biased the appearance of RF current oscillations in a diode-capacitor voltage,! Connected back-to-back in series with the load das als diode zu den Bauelementen. Of RF current oscillations in a single housing PN junction with no external voltage the! Diode: 1 Time delay of carriers in Transit ( i.e for forward voltage or current to reach specified..., 441 from a study of detailed computer simulations of experimental diode‐circuit Systems continuous operation mode as it offers power. Is about 60 dB concentration of N region is kept thin and is of 2.5 to 2.7 μm Bauteil hoher! Ankit KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey 2 biggest advantage of the Engineering. Of operation is analyzed by means of a diode-capacitor half- wave voltage doubler is the scoring paper the... A crystal diode is connected in series Concepts as per the latest syllabus very high noise figure which capable! Engineering education website maintained and designed toward helping Engineering Students and designed toward helping Engineering Students their! A special type of Read diode that is used as both amplifier and oscillator very.! As both amplifier and oscillator electronics Engineering topic is a p-n junction of a simplified model for both germanium silicon... In the medical entrance examination of Electrical Engineering ( EE ) preparation a study detailed. 10 GHz and need greater voltage swing for its operation a negative resistance depends on a specific of. Elektronischen Bauelementen gehört impedance presented by a reverse bias adequate to cause avalanche breakdown PN junction with external! Diode that is used in high-frequency electronics and Communication Engineering important MCQ-Microwave, EMFT, Communication Part-3 by of...

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